RF1S40N10 Datasheet

   Type Designator: RF1S40N10
   Marking Code: F1S40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-262AA