IRFR4105 Datasheet

   Type Designator: IRFR4105
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252