IKD06N60R Datasheet

   Type Designator: IKD06N60R
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K06R60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 7 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Qgⓘ - Total Gate Charge, typ: 48 nC
   Package: TO252